Web11 apr 2024 · Ion-sensitive field-effect transistors (ISFET) are used in various sensing applications including electrochemical biosensing. In this study, analytical models of Ta 2 O 5, Si 3 N 4, and SiO 2-gated ISFET-based sensors were developed using MATLAB ® and LTspice. The site binding, surface potential, threshold voltage, and drain current … WebSe prepararon películas delgadas de SnO2 mediante oxidación térmica rápida (RTO) de Sn a una temperatura de oxidación de 873 K y un tiempo de oxidación de 90 segundos sobre un sustrato semiconductor de silicio de tipo n y tipo p. Para caracterizar el dispositivo preparado, se midieron sus propiedades eléctricas. …
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Web本論文では、この問題を解決するためにタンタルをドープした酸化スズ(Ta-SnO2 – δ)ナノ粒子を合成し、溶融凝集によって粒子のネットワークを形成させた。それを担体とするPt担持触媒(Pt/Ta-SnO2 – δ)をPEFCカソード触媒として、その電気導電性、ORR ... Web26 feb 2010 · High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than … shelly v michels
High Mobility Exceeding 80 cm2 V-1 s-1 in Polycrystalline Ta-Doped SnO2 …
WebTransparent Ta doped SnO 2 films deposited by RF co-sputtering Abstract: Tantalum doped tin oxide (TaTO) has the potential to surpass the more commonly used transparent … WebTransparent Ta doped SnO 2 films deposited by RF co-sputtering T. J. Featherstone 1, J. E. N. Swallow , J. D. Major , K. Durose , and T. D. Veal1 1Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool, L69 7ZF, United Kingdom Abstract –Tantalum doped tin oxide (TaTO) has the potential to surpass the … Web1 feb 2001 · SnO2 has a number of desired features, including excellent chemical, mechanical, and thermal stability [14], offering less resistance to the flow of current, has … shelly voet